NTS2101P power mosfet ?8.0 v, ?1.4 a, single p?channel, sc?70 features ? leading trench technology for low r ds(on) extending battery life ? ?1.8 v rated for low voltage gate drive ? sc?70 surface mount for small footprint (2 x 2 mm) ? pb?free package is available applications ? high side load switch ? charging circuit ? single cell battery applications such as cell phones, digital cameras, pdas, etc. maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain?to?source voltage v dss ?8.0 v gate?to?source voltage v gs 8.0 v continuous drain current (note 1) stead y state t a = 25 c i d ?1.4 a t a = 70 c ?1.1 t 5 s t a = 25 c ?1.5 a power dissipation (note 1) steady state t a = 25 c p d 0.29 w t 5 s 0.33 w pulsed drain current tp = 10 s i dm ?3.0 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode), continuous i s ?0.46 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max units junction?to?ambient ? steady state (note 1) r ja 430 c/w junction?to?ambient ? t 5 s (note 1) r ja 375 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). s g d device package shipping ? ordering information NTS2101Pt1 sot?323 3000/tape & reel p?channel mosfet sc?70/sot?323 case 419 style 8 marking diagram & pin assignment 2 1 3 v (br)dss r ds(on) typ i d max ?8.0 v 65 m @ ?4.5 v 78 m @ ?2.5 v 117 m @ ?1.8 v ?1.4 a ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NTS2101Pt1g sot?323 (pb?free) 3000/tape & reel ts m 1 2 3 gate source drain ts = device code m = date code* = pb?free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?8.0 ?20 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j ?10 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ?6.4 v t j = 25 c ?1.0 a t j = 70 c ?5.0 gate?to?source leakage current i gss v ds = 0 v, v gs = 8.0 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = ?250 a ?0.45 ?0.7 v negative threshold temperature coefficient v gs(th) /t j 2.6 mv/ c drain?to?source on resistance r ds(on) v gs = ?4.5 v, i d = ?1.0 a 65 100 m v gs = ?2.5 v, i d = ?0.5 a 78 140 v gs = ?1.8 v, i d = ?0.3 a 117 210 charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ?8.0 v 640 pf output capacitance c oss 120 reverse transfer capacitance c rss 82 total gate charge q g(tot) v gs = ?5.0 v, v dd = ?5.0 v, i d = ?1.0 a 6.4 nc threshold gate charge q g(th) 0.7 gate?to?source charge q gs 1.0 gate?to?drain charge q gd 1.5 switching characteristics (note 3) turn?on delay time t d(on) v gs = ?4.5 v, v dd = ?4.0 v, i d = ?1.0 a, r g = 6.2 6.2 ns rise time t r 15 turn?off delay time t d(off) 26 fall time t f 18 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ?0.3 a t j = 25 c ?0.62 ?1.2 v t j = 125 c ?0.51 reverse recovery time t rr v gs = 0 v, di sd /dt = 100 a/ s, i s = ?1.0 a 23.4 ns charge time t a 7.7 discharge time t b 15.7 reverse recovery charge q rr 9.5 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. NTS2101P smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
|
